CONTROL METHOD FOR REWRITE-IN OPERATION OF MEMORY CELL IN SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE PROVIDED WITH THE SEMICONDUCTOR INTEGRATED CIRCUIT, AND ELECTRONIC EQUIPMENT USING THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem that the start of rewrite-in operation is delayed and finishing of read-out operation is delayed, resulting in that read-out operation cycle is delayed, since the timing of switching the potential of a plate line PL to the potential GND from the power soure potential VDD is set after much time elapses after a sense amplifier reads out data, in a conventinal method.;SOLUTION: When a sense amplifier 3 detects data H, the potential of a plate line PL is switched to a potential GND from a power source potential VDD. That is, the start of rewrite-in operation can be quickened since the timing of switching the potential of a plate line to GND potential from power source potential VDD can be set immediately after reading out data by a sense amplifier. Thus, it is possible to quicken the start of rewrite-in operation, to quicken the finish of read-out operation and to shorten a read-out operation cycle since timing of switching a potential of a plate line to GND potential from power source potential VDD can be set immediately after the sense amplifier reads out data.;COPYRIGHT: (C)2002,JPO