METHOD OF CLEANING TUBE FOR HEAT TREATMENT OF SEMICONDUCTOR SUBSTRATE, AND METALLIC CONTAMINATION GETTER SUBSTRATE, AND REGENERATIVE METAL CONTAMINATION GETTER SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method which can clean the heat treatment tube of a semiconductor substrate heat treatment device, which is used in the heat treatment process such as the oxidation and diffusion process, etc., of a semiconductor substrate, reducing the quantity of metallic contamination efficiently without raising its cost, and a metal contamination getter substrate and a regenerative metal contamination getter substrate used in that cleaning method.;SOLUTION: The heat treatment tube is cleaned, by putting the substrate fitted with a polysilicon film, on the surface of which having nonetching property to the etchant of silicon the polysilicon film is stacked, into the heat treatment tube prior to heat treatment.;COPYRIGHT: (C)2002,JPO