Metal contamination of the semiconductor substrate evaluation method and a semiconductor substrate manufacturing method of

摘要

PROBLEM TO BE SOLVED: To provide means for performing metal contamination evaluation of a semiconductor substrate by the DLTS method with a high sensitivity.;SOLUTION: A metal contamination evaluation method for a semiconductor substrate includes: producing a diode by forming a semiconductor junction on one surface of an evaluation target semiconductor substrate and forming an ohmic layer on the other surface; performing DLTS measurement of the produced diode; evaluating presence or absence of metal contamination of the evaluation target semiconductor substrate, or a degree of metal contamination, or the presence or absence and the degree of the metal contamination, on the basis of measurement results. Before the production of the diode, the following processing 1 or 2 is performed. Processing 1: Heat treatment performed on such a condition that a thermal donor is formed or activated in a case where the evaluation target semiconductor substrate is an epitaxial wafer or an annealing wafer or a part of the same. Processing 2: Thinning processing for thinning a thickness of the semiconductor substrate from a surface on a side where the ohmic layer is formed.;COPYRIGHT: (C)2014,JPO&INPIT