METHOD OF CORRECTING PROXIMITY EFFECTS IN ELECTRON BEAM EXPOSURE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of correcting the proximity effect in electron beam exposure, where there is neither reduction in throughput nor deterioration in TAT (time required for electron beam lithography process), and moreover there is no deterioration in dimensional accuracy.;SOLUTION: In an electron beam exposure step, where electron beams are irradiated on the surface of a layer to be exposed for a pattern, scattering of the electron beams causes proximity effects, which is turn causes errors in exposure energy in the layer to be exposed to a pattern. To correct these errors, the surface of the layer to be exposed to a pattern is divided into smaller segments of a specified area causing the proximity effects. These smaller segments are ghost areas, and in a ghost light exposure step, the ghost areas are exposed to ghost light individually, with corrected exposure energy being determined for each ghost area.;COPYRIGHT: (C)2002,JPO