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Triple metal line 1T/1C ferroelectric memory device and method for fabrication thereof
Triple metal line 1T/1C ferroelectric memory device and method for fabrication thereof
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机译:三重金属线1T / 1C铁电存储器件及其制造方法
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摘要
Disclosed is a triple metal line 1T/1C ferroelectric memory device and a method to make the same. A ferroelectric capacitor is connected to the transistor through a buried contact plug. An oxidation barrier layer lies between the contact plug and the lower electrode of the capacitor. A diffusion barrier layer covers the ferroelectric capacitor to prevent diffusion of material into or out of capacitor. As a result of forming the oxidation barrier layer, the contact plug is not exposed to the ambient oxygen atmosphere thereby providing a reliable ohmic contact between the contact plug and the lower electrode. Also, the memory device provides a triple interconnection structure made of metal, which improves device operation characteristics.
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