A highly reliable 1T/1C ferroelectric memory

摘要

A reliable 1T/1C ferroelectric RAM has been successfully fabricated with 1.2 /spl mu/m conventional CMOS technology by adopting IrO/sub 2/ electrode and the Ti-rich PZT thin film. The Ti-rich PZT capacitor shows no degradation of sensing Pr after integration process. After 1/spl times/10/sup 10/ cycling, the loss of remnant polarization was less than 5%. In thermally accelerated (150/spl deg/C) test condition, more than 14 /spl mu/C/cm/sup 2/ for both data 0 and data 1 sensing Pr values are obtained even after 10 years.