/ TRIPLE METAL 1T/1C FERROELECTRIC CAPACITOR AND METHOD FOR FABRICATING THEREOF

摘要

The present invention relates to a method of forming 1T / 1C nonvolatile ferroelectric memory device, and this, with multiple metal wiring, and then patterning the ferroelectric capacitor via the contact plug connected to the transistor electrically, film oxide formed on the contact plug since the patterned heat treatment after the diffusion preventive film for covering the capacitor, when the diffusion prevention heat treatment of the contact plug is not exposed to an oxygen atmosphere to form the contact omseong (ohmic contact) between the capacitor lower electrode and the contact plug effectively. Furthermore, according to the present invention, since the bit line, word line straps line and plate line are all formed of metal, it is possible to form a low-resistance wiring, it is possible to improve the operating characteristics of the device.