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An Optimized Process and Characterization of Pb(Zr,Ti)O_3 Ferroelectric Capacitor for 1T/1C Ferroelectric RAM

机译：用于1T / 1C铁电RAM的PB（ZR，TI）O_3铁电电容器的优化工艺和表征

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An optimized process of Pb(Zr,Ti)O_3(PZT) ferroelectric capacitor has been investigated in order to develop a highly scaleable 1T/1C ferroelectric random access memory. The PZT ferroelectric capacitor, Pt/PZT/Pt stack, was formed on the TiO_2/SiO_2/Si substrate. The PZT thin films were prepared by conventional sol-gel multi-coating method. Physical and electrical properties of the PZT ferroelectric capacitors were characterized by XRD, SEM, TEM and RT6000S, respectively.

机译：已经研究了PB（Zr，Ti）O_3（PZT）铁电电容器的优化过程，以便开发高度可扩展的1T / 1C铁电随机存取存储器。在TiO_2 / SiO_2 / Si衬底上形成PT / PZT / Pt堆的PT / PZT / PT堆。通过常规的溶胶 - 凝胶多涂层方法制备PZT薄膜。 PZT铁电电容器的物理和电性能分别以XRD，SEM，TEM和RT00s为特征。

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《Symposium on ferroelectric thin films》|1998年||共6页
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Dong-Won Shin; Soo-Ho Shin; Jin-Woo Lee; Hong-Bae Park; Yoon-Soo Chun; Mi-Hyang Lee; Dong-Jin Jung; Yoo-Sang Hwang; Bon-Jae Koo; Sung-Young Lee; Kinam Kim; Materials Research Society;
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2. WAS IT NECESSARY TO INTRODUCE THE NOTION "RELAXOR FERROELECTRICS"? - THE PROBLEM OF PHASE TRANSITIONS IN (Pb, Li_(1/2)-La_(1/2))(Zr, Ti)O_3, (Pb,La)(Zr,Ti)O_3, Pb(Mg_(1/3)Nb_(2/3))O_3, Pb(In_(1/2)Nb_(1/2))O_3. AND RELATED MATERIALS. 1. MODEL CONCEPTIONS [J] . V.M. ISHCHUK Ferroelectrics: Letters Section . 2001,第1期

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3. Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO_x bottom electrode for the La-doped Pb(Zr,Ti)O_3 ferroelectric capacitor [J] . Nomura Kenji, Wang Wensheng, Yamaguchi Hideshi, Japanese journal of applied physics . 2018,第11S期

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4. An Optimized Process and Characterization of Pb(Zr,Ti)O_3 Ferroelectric Capacitor for 1T/1C Ferroelectric RAM [C] . Dong-Won Shin, Soo-Ho Shin, Jin-Woo Lee, Symposium on ferroelectric thin films . 1998

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An Optimized Process and Characterization of Pb(Zr,Ti)O_3 Ferroelectric Capacitor for 1T/1C Ferroelectric RAM

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