Phototonic device with strain-induced three dimensional growth morphology

摘要

In order to fabricate a photonic device with an enhanced photoresponse at 155 nm, a plurality of undulating quantum well layers are grown on said substrate in a three dimensional growth mode to defeat the limitations imposed by strain on the maximum layer thickness. The quantum wells typically are formed by epitaxially growing alternating layers of Si_1−x,Ge_x, and Si on a silicon substrate.