PHOTOTONIC DEVICE WITH STRAIN-INDUCED THREE DIMENSIONAL GROWTH MORPHOLOGY

摘要

In order to fabricate a photonic device with an enhanced photoresponse at 155nm,a plurality of undulating quantum well layers are grown on said substrate in athreedimensional growth mode to defeat the limitations imposed by strain on themaximumlayer thickness. The quantum wells typically are formed by epitaxially growingalternating layers of Si1-xGeX and Si on a silicon substrate.