首页> 外国专利> METHOD OF FORMING A LOCAL INTERCONNECT, METHOD OF FABRICATING INTEGRATED CIRCUITRY COMPRISING AN SRAM CELL HAVING A LOCAL INTERCONNECT AND HAVING CIRCUITRY PERIPHERAL TO THE SRAM CELL, AND METHOD OF FORMING CONTACT PLUGS

METHOD OF FORMING A LOCAL INTERCONNECT, METHOD OF FABRICATING INTEGRATED CIRCUITRY COMPRISING AN SRAM CELL HAVING A LOCAL INTERCONNECT AND HAVING CIRCUITRY PERIPHERAL TO THE SRAM CELL, AND METHOD OF FORMING CONTACT PLUGS

机译:形成局部互连的方法,制造包括具有局部互连并将电路外围连接到SRAM单元的SRAM单元的集成电路的方法以及形成接触塞的方法

摘要

In one implementation, a substrate is provided which has at least two nodes to be electrically connected. A first conductivity type semiconductive material is formed over and in electrical connection with one of the nodes. A conductive diffusion barrier material is formed over and in electrical connection with the first conductivity type semiconductive material. A second conductivity type semiconductive material is formed over and in electrical connection with the first conductivity type semiconductive material through the conductive diffusion barrier material, and over and in electrical connection with another of the nodes. The first conductivity type semiconductive material, the conductive diffusion barrier material and the second conductivity type semiconductive material are formed into a local interconnect electrically connecting the one node and the another node. Local interconnects fabricated by this and other methods are also contemplated. The invention includes in one implementation a method of forming contact plugs.
机译:在一种实施方式中,提供了具有至少两个要电连接的节点的基板。在其中一个节点之上并与之电连接形成第一导电类型的半导体材料。导电扩散阻挡材料形成在第一导电类型半导电材料上方并与之电连接。第二导电类型半导体材料形成在第一导电类型半导体材料之上并通过导电扩散阻挡材料与之电连接,并且形成于另一节点之上并与其电连接。第一导电类型半导体材料,导电扩散阻挡材料和第二导电类型半导体材料形成为电连接一个节点和另一节点的局部互连。也可以考虑通过这种方法和其他方法制造的局部互连。在一个实施方式中,本发明包括一种形成接触塞的方法。

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