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Growing transition metal nitride thin films by using compound having hydrocarbon, amino or silyl group bound to nitrogen as nitrogen source material
Growing transition metal nitride thin films by using compound having hydrocarbon, amino or silyl group bound to nitrogen as nitrogen source material
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机译:通过使用具有与氮键合的烃,氨基或甲硅烷基的化合物作为氮源材料,生长过渡金属氮化物薄膜
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摘要
Transition metal nitride thin films are grown on substrate using alternate surface reactions of metal and nitrogen source materials. The nitrogen material is a compound with a hydrocarbon, amino or silyl group bound to nitrogen. The group generates a radical that serves as a reducing agent and/or reacts to generate atomic hydrogen when it dissociates in homolytically from nitrogen. An Independent claim is also included for a method of producing an electrically conductive diffusion barrier layer on a substrate comprising integrated circuits between a conductor and an isolation layer, comprising introducing the integrated circuit comprising conductors into the reaction space of an atomic layer deposition reactor, and growing a conductive metal nitride thin film on the integrated circuit using the inventive method.
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