METHOD FOR GROWING GROUP III METALLIC NITRIDE THIN FILM BY ORGANOMETALLIC COMPOUND CHEMICAL VAPOR DEPOSITION METHOD USING NITROGEN ATOM IN ACTIVE STATE AS NITROGEN SUPPLYING SOURCE

摘要

PURPOSE: An organometallic compound chemical vapor deposition method is provided which grows a group III metallic nitride thin film on a substrate by using a nitrogen atom in the active state instead of ammonia as a nitrogen supplying source. CONSTITUTION: The method for growing a single crystalline group III metallic nitride thin film on a substrate comprises the process of chemical vapor deposition reacting the substrate at 700 to 1000 deg.C of a temperature of the substrate inside a chemical vapor deposition reactor using an organometallic compound precursors or a mixture thereof as a supplying source of group III elements, and using a nitrogen atom in the active state (nitrogen atom-active type) as a nitrogen supplying source, wherein the substrate is a crystalline sapphire (-Al2O3), silicon (Si), gallium arsenic (GaAs) or quartz wafer, or silica glass.