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Group 2 and first row transition metal complexes containing nitrogen donor ligands: Metal source precursor design for atomic layer deposition thin film growth.

机译:含氮供体配体的第2组和第一排过渡金属配合物:用于原子层沉积薄膜生长的金属源前驱体设计。

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摘要

Three different classes of nitrogen-donor ligand systems, namely, β-diketiminato, pyrazolato, and amidinato have been used to prepare source compounds of Group 2 metals for GaN doping and for use in thin film fabrication of related materials. The work described mostly entailed the use of diketiminato ligands in an effort aimed at controlling molecular oligomerization which generally retards volatility. Accordingly, a series of momomeric Group 2 metal complexes containing β-diketiminato ligands LtBu and LiPr has been prepared and fully characterized by spectral and analytical methods and by X-ray crystallography. Surprisingly, the β-diketiminato ligands adopt diverse bonding modes, including η2, η5, μ-η 1:η1, and μ-η5:η 5. Also all of these complexes are volatile and should serve well in thin film deposition processes. In addition, several monomeric pyrazolato complexes of strontium and barium have been prepared by protonolysis routes in the presence of multidentate oxygen or nitrogen donor ligands. In another route, the combination of pyrazolato and β-diketiminato ligands afforded dimeric complexes featuring terminal η5-β-diketiminato ligands. Neither the monomeric nor the dimeric species were volatile, and, instead, they decompose upon losing their capping ligands under sublimation conditions.;The β-diketiminato chemistry was extended to the first row transition metals. A series of β-diketiminato complexes of the first row transition metals has been prepared in an effort aimed at the preparation of volatile and oxygen-free metal source compounds for doping GaN with chromium and manganese, as well as to provide reactive precursors for pure metal and metal oxide deposition by ALD. All of these complexes are volatile and thermally stable under sublimation conditions. The alkyl substituted β-diketiminato ligands exhibit the η 5-bonding mode with chromium and the η2-bonding mode with manganese, iron, and cobalt.
机译:三种不同类型的氮供体配体系统,即β-二酮基亚胺,吡唑并和a胺已被用于制备用于GaN掺杂的2族金属的源化合物,并用于相关材料的薄膜制造中。所描述的工作主要需要使用二酮亚胺基配体,以努力控制通常会降低挥发性的分子低聚。因此,已经制备了一系列含有β-二酮基氨基配体LtBu和LiPr的单体2族金属配合物,并通过光谱和分析方法以及X射线晶体学对其进行了充分表征。出人意料的是,β-二酮亚氨基配体采用多种键合模式,包括η2,η5,μ-η1:η1和μ-η5:η5。而且所有这些络合物都是挥发性的,应在薄膜沉积过程中很好地发挥作用。另外,在多齿氧或氮供体配体的存在下,通过质子分解途径制备了锶和钡的几种单体吡唑并合物。在另一种途径中,吡唑并与β-二酮基氨基配体的组合提供了具有末端η5-β-二酮基氨基配体的二聚体复合物。单体和二聚体都不是挥发性的,而是在升华条件下失去封端配体时分解。β-二酮亚胺基化学扩展到第一行过渡金属。制备了一系列第一排过渡金属的β-二酮基金属配合物,旨在制备用于向GaN中掺杂铬和锰的挥发性无氧金属源化合物,并为纯金属提供反应性前体以及通过ALD的金属氧化物沉积。所有这些配合物在升华条件下均具有挥发性和热稳定性。烷基取代的β-二酮基氨基配体与铬表现出η5键合模式,与锰,铁和钴表现出η2键合模式。

著录项

  • 作者

    El-Kaderi, Hani M.;

  • 作者单位

    Wayne State University.;

  • 授予单位 Wayne State University.;
  • 学科 Chemistry Inorganic.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 272 p.
  • 总页数 272
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:41:14

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