- MOCVD for the Growth of -Group Metal Nitride Thin Films Using Activated-Nitrogen as Nitrogen Source

摘要

The present invention is in the active state as a source of nitrogen, the nitrogen atom (N ^*, the nitrogen atom-active species) in the method of growing metal nitride thin films of Group III of the single crystal, amorphous or polycrystalline by metal organic chemical vapor deposition method relates to the use of .; According to the invention, ammonia is used as nitrogen source in metal organic chemical vapor deposition of a conventional Group III metal nitride gas (NH ₃₎ instead of the nitrogen atom-active species, especially the nitrogen atoms by a dielectric barrier discharge - by using an active species , as well as about 700 ℃ to 1000 ℃ low temperature single crystal sapphire (α-Al ₂ O ₃₎ in a silicon (Si), gallium arsenide (GaAs) or quartz wafer, or a polycrystalline silica glass (SiO ₂ - the glass) even on the substrate Group III of the single crystal, amorphous or polycrystalline can be grown a metal nitride thin film. In addition, the nitrogen atom, as in the case of using ammonia - not only do not have to unnecessarily supplied to the large amount of the active species, a sufficient amount of nitrogen, as needed - it is possible to supply the active species of the Group III growth rate of the metal nitride thin film the faster.