SEMICONDUCTOR MEMORY DEVICE WITH SOURCE LINES HAVING VOLTAGE LEVELS CONTROLLED BY DATA WRITE MODES

摘要

And a potential difference larger than a power supply voltage is provided between the gate and the source and the drain of the memory cell, thereby executing data rewriting of the memory cell. This semiconductor memory device is provided with a source line potential control circuit for controlling the potential of the source line. The source line potential control circuit sets the potential of the source line in the plurality of block batch " 1 " data write modes to be lower than the normal data write mode.