Semiconductor Optoelectronic Device with a Non-rectangular Substrate

摘要

PURPOSE: A photoelectronic semiconductor device having a non-rectangular substrate is provided to reduce abrasion and damage of a cutting tool and improve a yield of dicing process by preventing effectively a die chipping phenomenon. CONSTITUTION: A hexagonal crystal wafer(30) used as a substrate of a GaN-based photo-emission diode is prepared. An n-type GaN-based chemical semiconductor layer(31), an In-GaN-based active layer(32), a p-type GaN-based chemical semiconductor layer(33) are continuously formed on an upper portion of the hexagonal crystal wafer(30). A dry etch process is performed to remove partially the p-type GaN-based chemical semiconductor layer(33), the In-GaN-based active layer(32), and the n-type GaN-based chemical semiconductor layer(31). A p-type electrode(34) and an n-type electrode(35) are formed on the p-type GaN chemical semiconductor layer(33) and the exposed n-type GaN-based chemical semiconductor layer(31), respectively.