A method for forming storage node in semiconductor device using selective hemi-spherical silicon grain

摘要

The present invention relates to that, in particular, the charge storage electrode forming method using the semiconductor device hemispherical silicon grain (hemi-spherical silicon grain, HSG) in the manufacture of a semiconductor manufacturing technology. An object of the present invention is to provide a charge storage electrode forming method of a semiconductor device capable of preventing the increase of particles between the bridge and a charge storage electrode according to the HSG detached from the upper portion of the cylinder structure. The present invention relates to a technique for using a gas (e.g., CF-based gas) containing carbon (plasma treatment after etching back the etch-back time or to) the time of forming the charge storage electrode pattern by etching an amorphous silicon film, a charge storage room of the electrode to prevent HSG is not formed over the structure of the reader so that the top and out of the HSG is a fear of that portion off during subsequent processing.