Two Chambered Chemical Vapor Deposition Apparatus for Producing Quantum Dots

摘要

The present invention relates to a dual chamber chemical vapor deposition apparatus for forming a quantum dot, comprising: a reaction chamber having an inlet through which a precursor is introduced, and a reactant through which the precursor introduced through the inlet reacts to generate charged clusters; And an adjustable orifice for passing charged clusters falling to the lower end of the reaction chamber, a shutter unit mounted at the lower end of the orifice to block or pass charged clusters passing through the orifice, passing through the shutter unit. It is characterized in that it comprises a deposition chamber having a stand on which the substrate on which one charged cluster is deposited is placed. The dual chamber chemical vapor deposition apparatus for forming a quantum dot according to the present invention can not only form a quantum dot having a uniform size distribution in a single process using a double chamber without undergoing a multi-step process, There is an advantage to control the density.