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A process chamber of a semiconductor device for producing a chemical vapor deposition apparatus

机译:用于生产化学气相沉积设备的半导体器件的处理室

摘要

The present invention relates to a process chamber of a semiconductor device for producing a chemical vapor deposition apparatus. Processing chamber of the invention is a boat which a plurality of wafer mounting (Boat), surrounding the boat forms a predetermined space, the upper end a surrounding constitutes the inner tube, the inner tube a predetermined space of the cylindrical opening in the dome shape, a cylindrical upper end is sealed with a semi-spherical outer tube, a heater (heater) is formed surrounding the outer tube, is formed at the lower end of the outer tube, said inner tube and connected between the external tube a vacuum exhaust port, the lower end of the inner tube is formed on, and attached to the gas inlet and a lower end of the boat for introducing a process gas into the inner tube, it comprises a boat loader pushing the boat into the inner tube. The length of the dome portion of the inner pipe is preferably at least 5 ㎜. The angle of the dome portion of the inner tube forms the side and 10 ° to 80 ° of the inner tube. Therefore, by making uniform the thickness of a thin film formed on a semi-spherical portion of the outer tube, it is possible to prevent a crack to extend more than twice the piem period, the outer tube discarded becomes less it is effective in cost reduction.
机译:半导体装置的处理室技术领域本发明涉及用于制造化学气相沉积装置的半导体装置的处理室。本发明的处理室是一个舟皿,其上有多个晶片安装座(Boat),围绕舟皿形成预定的空间,其上端一个围绕物构成内管,该内管预定的空间呈圆顶状的圆柱形开口,圆柱形的上端用半球形的外管密封,加热器(加热器)围绕外管形成,在外管的下端形成,所述内管与外管之间连接有真空排气口在端口上,内管的下端形成并连接到气体入口和舟皿的下端,用于将工艺气体引入内管,它包括将舟皿推入内管的舟皿装载器。内管的圆顶部分的长度优选为至少5 5。内管的圆顶部分的角度形成内管的侧面和10°至80°。因此,通过使形成在外管的半球形部分上的薄膜的厚度均匀,可以防止裂纹扩展到两倍于蠕动周期,丢弃的外管变少,成本有效。减少。

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