Deposition and Characterization of Si Quantum Dot Multilayers Prepared by Plasma Enhanced Chemical Vapor Deposition using SiH

摘要

flow rate, crystal volume of Si was decreased and optical gap was increased. This results suggest the increasing of oxygen content in samples. From this analysis, Si-QD multilayers having different Si-QD size were fabricated and were evaluated for structural properties. A cross-sectional transmission electron microscopy image showed the formation of Si-QDs with the diameter of about 5 nm. PL spectra showed the bandgap was blue-shifted to 1.3 eV with decreasing the size of Si-QDs to 5 nm, indicating the quantum size effect appeared in these samples.