TFT memory device having gate insulator with charge-trapping granules

摘要

A TFT memory B11/B including a substrate B21/B, a polysilicon layer B22/B comprising a source region B22a/B, a channel region B22b/B and a drain region B22c/B formed on the substrate B21/B, an extremely thin insulating film B23/B formed on the polysilicon layer B22/B, granular semiconductor or metal charge-trapping bodies B24/B for trapping the charge of injected carriers placed on the extremely thin insulating film B23/B and a further insulating film B25/B formed over the charge-trapping bodies B24/B and extremely thin insulating film B23/B. Also a method of manufacturing this device.