Carrier Transport Study in Silicon Devices: Electrical and Optical Studies of Multi-Layer Insulators for Memory Device Applications.

摘要

We have studied the electrical and optical behavior of specimens from a 3x5 matrix, considering three deposition temperatures. In addition to a set of unannealed specimens at each deposition temperature, four sets of annealed samples were prepared at each temperature, for high and low temperature treatments in hydrogen and in nitrogen. By excluding results for specimens prepared at 750 Deg. C, except those receiving anneals at 1000 Deg. C in either hydrogen or nitrogen, we found clear direct effects of annealing on all the parameters of preliminary interest. The results of spectroscopic ellipsometry analysis indicate that the film structure of the specimen with the baseline silicon nitride is significantly different from the films deposited at higher temperature. It does not have an ellipsometrically detectable layer of silicon dioxide at the silicon surface. The stability of the memory states associated with the pulsed write and clear conditions correlated with the final density of fast surface states, except for anomalous behavior of the 750 Deg. C, unannealed specimen. (Author)