首页> 外国专利> GATE INSULATOR FILM FOR ORGANIC TFT AND ORGANIC TFT ELEMENT HAVING THE INSULATOR FILM

GATE INSULATOR FILM FOR ORGANIC TFT AND ORGANIC TFT ELEMENT HAVING THE INSULATOR FILM

机译:用于有机TFT的栅极绝缘膜和具有绝缘膜的有机TFT元件

摘要

PROBLEM TO BE SOLVED: To provide a gate insulator film for an organic TFT, which comprises a curable composition giving a thin film being excellent surface water repellency and insulation properties; and an organic thin film transistor element using the same.;SOLUTION: The present invention is a gate insulator film for an organic TFT, which comprises a curable composition with an epoxy group-containing compound as a main component and is characterized by having a water contact angle of 95 degrees or more on a thin film surface after curing. The gate insulator film can be applied as an insulator film for an organic TFT due to its excellent insulation properties and high surface water repellency, and can give an organic TFT element expressing excellent transistor characteristics.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供一种用于有机TFT的栅绝缘膜,该栅绝缘膜包括可固化的组合物,该组合物给出了具有优异的表面疏水性和绝缘性的薄膜。解决方案:本发明是一种用于有机TFT的栅绝缘膜,其包括以含环氧基的化合物为主要成分的可固化组合物,其特征在于具有水固化后在薄膜表面的接触角为95度以上。栅绝缘膜由于其优异的绝缘性能和高表面防水性而可以用作有机TFT的绝缘膜,并且可以使有机TFT元件表现出优异的晶体管特性。;版权所有:(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP2012209528A

    专利类型

  • 公开/公告日2012-10-25

    原文格式PDF

  • 申请/专利权人 KANEKA CORP;

    申请/专利号JP20110176122

  • 申请日2011-08-11

  • 分类号H01L29/786;H01L51/30;H01L51/05;C08L83/05;C08L83/07;C08L83/06;C08L83/08;C08G77/38;

  • 国家 JP

  • 入库时间 2022-08-21 17:44:22

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