Method of manufacturing a hydrogen-terminated diamond depletion-mode MESFET and the depletion-mode MESFET

摘要

PROBLEM TO BE SOLVED: To provide a depletion MESFET(metal semiconductor FET) formed on the surface of a hydrogen terminated diamond. ;SOLUTION: On the surface of a hydrogen terminated homo-epitaxial diamond with the surface terminated 2 by hydrogen atoms, a drain ohmic contact 3 made of gold, a source ohmic contact 4, and a gate electrode 5 made of Ni, W, Fe, Cu, Cr, or a metal, material having a Schottky barrier height from the diamond surface of 0.7eV or less, are formed. At the same time, the surface of a region other than an element forming region is caused to be an insulating region 11 of non-hydrogen termination, such as, oxygen termination.;COPYRIGHT: (C)1997,JPO