Numerical Analysis of Gate-to-Source Distance Effects in SiC MESFETs

摘要

Twodimensional DC and smallsignal analysis of gatetosource scaling effects in SiCbased highpower fieldeffect transistors have been performed in this paper. The simulation results show that a downscaling of gatetosource distance can improve device performance, i.e. enhancing drain current, transconductance,and maximum oscillation frequency. This is associated with the peculiar dynamic of electrons in SiC MESFETs,which lead to a linear velocity regime in the source access region. The variations of gatetosource capacitance,gatetodrain capacitance, and cutoff frequency with respect to the change in gatetosource length have also been studied in detail.