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The copper quantitative decisive device inside the silicon by the transient ion drift (DIT) and the method of using its technology
The copper quantitative decisive device inside the silicon by the transient ion drift (DIT) and the method of using its technology
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机译:瞬态离子漂移(DIT)法测定硅内部的铜定量决定性器件及其使用方法
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(57) Abstract This invention is something regarding the analysis method of using the analytical instrument and that device in order to do the measurement which uses the transient ion drift. The device in order to check the copper quantity inside silicon with the transient ion drift, mainly, forms the heating expedient and high-speed cooling expedient of the sample which is analyzed, and the electrode and the excited signal in order to measure the electric capacity of the sample possesses with the device which processes the measurement of the electric information. High-speed cooling expedient 3 of the sample 4 where as for this invention, heating expedient 2 of the sample 4 which is analyzed consists of 1 halogen lamps at least, is analyzed is water cooling system, furthermore, it features that the electrode which measures the sample 4 which is analyzed is the water source electrode.
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