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The copper quantitative decisive device inside the silicon by the transient ion drift (DIT) and the method of using its technology

机译:瞬态离子漂移(DIT)法测定硅内部的铜定量决定性器件及其使用方法

摘要

(57) Abstract This invention is something regarding the analysis method of using the analytical instrument and that device in order to do the measurement which uses the transient ion drift. The device in order to check the copper quantity inside silicon with the transient ion drift, mainly, forms the heating expedient and high-speed cooling expedient of the sample which is analyzed, and the electrode and the excited signal in order to measure the electric capacity of the sample possesses with the device which processes the measurement of the electric information. High-speed cooling expedient 3 of the sample 4 where as for this invention, heating expedient 2 of the sample 4 which is analyzed consists of 1 halogen lamps at least, is analyzed is water cooling system, furthermore, it features that the electrode which measures the sample 4 which is analyzed is the water source electrode.
机译:(57)<摘要>本发明是关于使用分析仪器和该装置的分析方法,以进行利用瞬态离子漂移的测量。为了通过瞬态离子漂移来检查硅内部的铜量的装置,主要是形成被分析样品的加热权宜和高速冷却权宜,以及电极和激发信号以测量电容样品的一部分具有处理电信息的测量装置。本发明中,被分析的样品4的加热方式2至少由1个卤素灯构成,被分析的样品4的高速冷却方式3为水冷却系统,另外,具有测定的电极为特征。被分析的样品4是水源电极。

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