QUANTITATIVE DETERMINATION DEVICE FOR COPPER IN SILICON BY TRANSIENT IONIC DRAINAGE (DIT) AND METHOD USING THE SAME

摘要

The invention concerns an analysing device for producing measurements using transient ionic drift technique and an analysis method using same. The device for the quantitative detection of copper in silicon by transient ionic drift essentially comprises means for heating and means for rapidly cooling the sample to be analysed, an electrode for measuring the electrical capacity of the sample and a unit generating an energising signal and processing the measuring electric signal. The invention is characterised in that the means for heating (2) the sample (4) to be analysed consists in at least a halogen lamp, the means for rapidly cooling (3) the sample (4) to be analysed is by water cooling, and the electrode for measuring the sample (4) to be analysed is a mercury electrode.