首页> 外国专利> Device for quantitative detection of copper in silicon by transient ionic drift and method using same

Device for quantitative detection of copper in silicon by transient ionic drift and method using same

机译:通过瞬时离子漂移定量检测硅中铜的装置及使用该装置的方法

摘要

An analyzing device for producing measurements using transient ionic drift technique and an analysis method using same. The device for the quantitative detection of copper in silicon by transient ionic drift essentially comprises a heater and a rapid cooler for the sample to be analyzed, an electrode for measuring the electrical capacity of the sample and a unit generating an energizing signal and processing the measuring electric signal. The heater (2) for the sample (4) to be analyzed consists in at least a halogen lamp, the rapid cooler (3) for the sample (4) to be analyzed is a water cooler, and the electrode for measuring the sample (4) to be analyzed is a mercury electrode.
机译:使用瞬态离子漂移技术产生测量值的分析装置和使用该装置的分析方法。通过瞬时离子漂移定量检测硅中铜的装置主要包括加热器和用于分析样品的快速冷却器,用于测量样品电容的电极以及用于产生激励信号并处理测量值的单元电信号。待分析样品( 4 )的加热器( 2 )至少由卤素灯组成,快速冷却器( 3 )用于被分析样品( 4 )是水冷却器,用于测量分析样品( 4 )的电极是水银电极。

著录项

  • 公开/公告号US6504377B1

    专利类型

  • 公开/公告日2003-01-07

    原文格式PDF

  • 申请/专利权人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;

    申请/专利号US20010763792

  • 发明设计人 THOMAS HEISER;

    申请日2001-02-27

  • 分类号G01N276/20;

  • 国家 US

  • 入库时间 2022-08-22 00:04:17

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