ION BEAM MICROFABRICATION METHOD OF INORGANIC MULTILAYER RESIST AND SEMICONDUCTOR DEVICE, QUANTUM DEVICE, MICROMACHINE COMPONENT AND FINE STRUCTURE THEREBY

摘要

PROBLEM TO BE SOLVED: To form fine two-dimensional and three-dimensional circuit patterns used for a quantum device on a multilayer substrate surface made of an inorganic material such as Si, SiC, and GaAs.;SOLUTION: On the surface of a semiconductor substrate X, an inorganic material Y layer is formed, where the inorganic material Y layer prevents the oxidation of the substrate X, and can form a stable oxide film layer chemically and thermally. On the surface of the Y layer, an inorganic material Z layer is formed, where the inorganic material Z layer prevents the oxidation of the Y layer, and can form a plurality of oxide films such as a thermally unstable natural oxide film and a forced oxide film that is chemically stable although the forced oxide film is weaker than the Y layer. After that, by metal ion implantation under the presence of a surface natural oxide film formed naturally on the surface of the Z layer or the radiation of an oxygen molecule, the surface natural oxide film is substituted for a stable forced oxide film Z' layer selectively or is produced. By the propagation of an O ion from the natural oxide film or forced oxide film Z' layer and the sputtering of the Z layer, a thermally and chemically stable oxide film Y' layer is generated in the Y layer, and then the surface of the substrate X is subjected to dry etching by a reactive etching gas.;COPYRIGHT: (C)2003,JPO