Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices

摘要

Planar edge termination structures of power semiconductor devices reduce the high electric potential close to the sawed physical edges. Careful design of field ring diffusions and metallized field plates are, however, required to avoid local electric field enhancements that could lead to premature breakdown. It has been shown that back side optical beam induced current (BS-OBIC) measurement offer a means to experimentally probe electric field distributions in termination structures that are optically inaccessible due to metallized field plates.