MACHINING METHOD OF Si SEMICONDUCTOR FINE STRUCTURE DUE TO ION BEAM IMPLANTATION LITHOGRAPHY OF INORGANIC MULTILAYER RESIST AND INTEGRATED CIRCUIT, DEVICE, AND MICROMACHINE COMPONENT THEREBY

摘要

PPROBLEM TO BE SOLVED: To provide an ion beam fine machining method for forming a fine circuit pattern used for a quantum device on an Si substrate surface without forming any mask for dry etching. PSOLUTION: On the surface of an Si wafer substrate 1, an Al layer 2 and an Si amorphous layer 3 are formed, and then a metal ion 6 is implanted onto the surface of the Si amorphous layer 3 through a mask 5. After that, the mask 5 is removed for implanting a metal ion 9. A surface natural oxide film is selectively substituted for SiOSB2/SB7 or is generated under the presence of a surface natural oxide film 4 that is formed on the surface of the Si amorphous layer 3 or oxygen molecule radiation, and further ions are implanted. As a result, after AlSBx/SBOSBy/SB8 is produced on the surface of the Al layer 2, dry etching is made in one atom layer unit by bromide, and the surface natural oxide film other than a portion that is substituted for SiOSB2/SBand AlSBx/SBOSBy/SB8, the Si amorphous layer, the Al layer, and one portion of the Si wafer substrate are removed. PCOPYRIGHT: (C)2003,JPO