METHOD FOR ION BEAM FINE PATTERNING OF INORGANIC MULTILAYER RESIST, AND SEMICONDUCTOR DEVICE, QUANTUM DEVICE, MICROMACHINE COMPONENT AND FINE STRUCTURE MANUFACTURED BY THE METHOD

摘要

A method for ion beam fine patterning of an inorganic multilayer resist, which comprises forming, on the surface of a semiconductor substrate(X), an inorganic material (Y) layer capable of forming a thermally and chemically stable oxidized film layer preventing the oxidation of the substrate(X) and, forming, on the surface of the inorganic material(Y)layer, an inorganic material (Z) layer capable of forming a thermally unstable natural oxidation film preventing the oxidation of the inorganic material (Y) layer and a forced oxidation film which is weaker than the above (Y) layer but is chemically stable, implanting a metal ion in the presence of a naturally formed oxidized surface film being formed on the surface of the (Z) layer or under the irradiation of molecular oxygen, to thereby selectively substitute a stable forced oxidized film (Z') layer for the above naturally formed oxidized surface film, increasing the amount of the ion implanted, to form a thermally and chemically stable oxidized film (Y') layer on the above (Y) layer through propagation of an O ion from the above naturally oxidized film or the above forced oxidized film (Z') layer and through sputtering of (Z)layer, and then subjecting the surface of the above substrate (X) to a dry etching with good accuracy using a reactive etching gas, to thereby remove the above surface oxidized film exclusive of the part substituted with the above forced oxidized film (Z') layer or the above oxidized film (Y') layer, the (Z) layer, the (Y) layer and a part of the substrate(X).