METHOD FOR FORMING HIGH ADHESION THIN COPPER FILM ON METAL NITRIDE SUBSTRATE BY CVD

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a high adhesion thin copper film on a metal nitride substrate.;SOLUTION: The method for forming a high adhesion thin copper film on a metal nitride substrate comprises a step for preparing a substrate having a metal nitride barrier layer formed at a part thereof, a step for heating the substrate in a CVD chamber at a temperature of 160°C-250°C for about 1 min and, at the same time, introducing copper precurdor into the CVD chamber at an initial flow rate of 0.1 ml/min and supplying an initial high wet helium gas flow into the CVD chamber at a flow rate higher than 5 sccm, a step for reducing the wet helium gas flow to 5 sccm or below, and a step for increasing the flow of copper precursor between about 0.1 ml/min-0.6 ml/min.;COPYRIGHT: (C)2003,JPO