首页>
外国专利>
Method of forming highly adhesive copper thin films on metal nitride substrates via CVD
Method of forming highly adhesive copper thin films on metal nitride substrates via CVD
展开▼
机译:通过CVD在金属氮化物衬底上形成高粘性铜薄膜的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of forming a highly adhesive copper thin film on a metal nitride substrate includes preparing a substrate having a metal nitride barrier layer formed on a portion thereof; heating the substrate in a chemical vapor deposition chamber to a temperature of between 160° C. to 250° C. for about one minute and simultaneously introducing a copper precursor into the reaction chamber at a very slow initial flow rate of between less than 0.1 ml/min, and simultaneously providing an initial high wet helium gas flow in the reaction chamber of greater than or equal to 5 sccm; reducing the wet helium gas flow in the reaction chamber to less than 5 sccm; and increasing the flow of copper precursor to between about 0.1 ml/min and 0.6 ml/min.
展开▼