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Application of a strain-compensated heavily doped etch stop for silicon structure formation
Application of a strain-compensated heavily doped etch stop for silicon structure formation
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机译:应变补偿重掺杂蚀刻停止层在硅结构形成中的应用
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摘要
A method of making a silicon micromechanical structure, from a lightly doped silicon substrate having less than 5×1019 cm−3 boron therein. A p+ layer having a boron content of greater than 7×1019 cm−3 and a germanium content of about 1×1021 cm−3 is placed on the substrate. A mask is formed on the second side, followed by etching to the p+ layer. An insulator is put on the p+ layer and an electronic component is fabricated thereon. Preferred micromechanical structures are pressure sensors, cantilevered accelerometers, and dual web biplane accelerometers. Preferred electronic components are dielectrically isolated piezoresistors and resonant microbeams. The method may include the step of forming a lightly doped layer on the p+ layer to form a buried p+ layer prior to etching.
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机译:一种由其中具有小于<5×10 19≤cm3≤3硼的轻掺杂硅衬底制造硅微机械结构的方法。 p&plus;硼含量大于7×10 19 Sup> cm &min ;; 3 Sup>且锗含量约为1×10 21 Sup> cm &min; 3 Sup>放置在基板上。在第二面上形成掩模,然后蚀刻至p&plus; p。层。将绝缘子放在p&plus;上。层和在其上制造电子部件。优选的微机械结构是压力传感器,悬臂式加速度计和双腹板双平面加速度计。优选的电子元件是介电隔离的压电电阻器和谐振微束。该方法可以包括在p&plus上形成轻掺杂层的步骤。层形成掩埋的p&plus;蚀刻之前的层。
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