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Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.

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1.Pattern Dependency of Pure-Boron-Layer Chemical-Vapor Depositions

机译：纯硼层化学气相沉积的模式依赖性
- 作者：V. Mohammadi;W.B. de Boer;T.L.M. Scholtes;L.K. Nanver
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
2.P-type Doping of Silicon Suitable for Structures with High Aspect Ratios by Using a Dopant Source of Boron Oxide Grown by Atomic Layer Deposition

机译：通过使用原子层沉积生长的氧化硼的掺杂源，适用于高纵横比结构的P型硅掺杂
- 作者：Bodo Kalkofen;Venu Madhav Mothukuru;Marco Lisker;Edmund P. Burte
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
3.From MEMS-CMOS towards Heterogeneous Integration over Scale

机译：从MEMS-CMOS到大规模异构集成
- 作者：Hiroyuki Fujita;Hiroshi Toshiyoshi;Tadashi Ishida
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
4.Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation

机译：通过直接晶圆键合和层剥离制造Ge / Si p-n二极管
- 作者：F. Gity;K. Y. Byun;K. -H. Lee;K. Cherkaoui;J. M. Hayes;A. P. Morrison;C. Colinge;B. Corbett
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
5.Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation

机译：缩放需要在热处理工艺方面不断创新：低温等离子体氧化
- 作者：W. Lerch;W. Kegel;J. Niess;A. Gschwandtner;J. Gelpey;F. Cristiano
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
6.Bipolar Resistive Switching Memory Characteristics Using Al/Cu/GeO_x/W Memristor

机译：使用Al / Cu / GeO_x / W忆阻器的双极电阻开关存储特性
- 作者：S. Maikap;S. Z. Rahaman
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
7.Ultra Low Temperature Epitaxial Growth of Strained Si Directly on Si Substrates

机译：直接在硅衬底上超低温外延生长应变硅
- 作者：D. Shahrjerdi;B. Hekmatshoar;S. W. Bedell;J. A. Ott;M. Hopstaken;D. K. Sadana
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
8.I Itrathin Ni_(1-x)Pt_x Films as Electrical Contact in CMOS Devices

机译：将Itrathin Ni_（1-x）Pt_x膜用作CMOS器件中的电触点
- 作者：Shi-Li Zhang
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
9.In Quest of a Fast, Low-Voltage Digital Switch

机译：寻求快速，低压数字开关
- 作者：T.N. Theis
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
10.Advances in Materials and Processes for 3D-TSV Integration

机译：3D-TSV集成的材料和工艺方面的进展
- 作者：James J.-Q. Lu
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
11.Characterization of Strain-Engineered Si:C Epitaxial Layers on Si Substrates

机译：硅衬底上应变工程化的Si：C外延层的表征
- 作者：Woo Sik Yoo;Toshikazu Ishigaki;Takeshi Ueda;Junya Kajiwara;Kitaek Kang;P.Y. Hung;Kah-Wee Ang;Byoung-Gi Min
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
12.Characterization of Global and Local Wafer Shape Change along Through Silicon Via Process Steps

机译：通过硅制程步骤进行的整体和局部晶圆形状变化的表征
- 作者：Chang Hwan Lee;Seok Ho Jie;Sang Soo Park;Hyung Won Yoo;II Keoun Han;Woo Sik Yoo
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
13.Enhancement in Electron Mobility at the Interface between Gd_2O_3(100) and n-type Si(100)

机译：Gd_2O_3（100）与n型Si（100）界面电子迁移率的增强
- 作者：W. Sitaputra;R. Tsu
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
14.Electrical Improvement of MIS Capacitor with HfAlOx Gate Dielectrics Treated by Dual Plasma Treatment

机译：双等离子体处理HfAlOx栅极电介质改善MIS电容器的电气性能
- 作者：I-Chung Deng;Kow-Ming Chang;Ting-Chia Chang;Po-Chun Chang;Bo-Wen Huang;Chien-Hung Wu
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
15.Nanocrystalline MoO_x Embedded ZrHfO High-ft Memories - Charge Trapping and Retention Characteristics

机译：纳米MoO_x嵌入式ZrHfO高ft存储器-电荷俘获和保留特性
- 作者：Xi Liu;Chia-Han Yang;Yue Kuo;Tao Yuan
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
16.Ultra-thin SOI/BOX Layers and Next Generations Planar Fully Depleted Substrates

机译：超薄SOI / BOX层和下一代平面完全耗尽的基板
- 作者：W. Schwarzenbach;V. Barec;X. Cauchy;N. Daval;S. Kerdiles;F. Boedt;O. Bonnin;B.-Y. Nguyen;C. Maleville
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
17.On-current variability sources of FinFETs: Analysis and Perspective for 14nm-Lg Technology

机译：FinFET的电流可变性来源：14nm-Lg技术的分析和展望
- 作者：T. Matsukawa;Y.X. Liu;K. Endo;S. Ouchi;M. Masahara
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
18.Cauchy-Urbach Dielectric Function Modeling of Amorphous High-k LaGdO_3 Films

机译：非晶态高k LaGdO_3薄膜的Cauchy-Urbach介电函数建模
- 作者：S. P. Pavunny;R. Thomas;R. S. Katiyar
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
19.Gas Source Depletion Study of High-Order Silanes of Silicon-Based Epitaxial Layers Grown with RPCVD and Low Temperatures

机译：RPCVD法低温生长硅基外延层高阶硅烷的气源耗竭研究
- 作者：Keith Chung;Paul Brabant;Manabu Shinriki;Satoshi Hasaka;Terry Francis;Hong He;Devendra Sadana
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
20.Electrical and Reliability Characterization of Ti/TiN Thin Film Resistor

机译：Ti / TiN薄膜电阻的电学和可靠性表征
- 作者：Y. L. Cheng;W. Y. Chang;B. J. We;F. H. Lu;Y. L. Wang
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
21.Development of High Selectivity Phosphoric Acid and Its Application to Flash STI Pattern

机译：高选择性磷酸的开发及其在闪光STI图案中的应用
- 作者：Sunghyuk Cho;Youngbang Lee;Jihye Han;Hyungsoon Park;Hyunghwan Kim;Sanghyon Kwak;Kihong Yang;Kwon Hong;Sungki Park;Hyosang Kang
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
22.Heterogeneous Chip Integration into Silicon Templates by Through-Wafer Copper Electroplating

机译：通过晶圆电镀铜将异质芯片集成到硅模板中
- 作者：C. D. Meyer;S. S. Bedair;S. M. Trocchia;M. A. Mirabelli;W. L. Benard;T. G. Ivanov;L. M. Boteler
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
23.The enhancement of etch rate of silicon by heavy doping of phosphorus and arsenic atoms during cyclic selective epitaxial growth of silicon

机译：在硅的循环选择性外延生长过程中，通过重掺杂磷和砷原子来提高硅的刻蚀速率
- 作者：Kong-Soo Lee;Yoongoo Kang;Ho-Kyun An;Seonghoon Jeong;Jae-Jong Han;Bonghyun Kim;Seokwoo Nam;Ho-Kyu Kang;Hong-Sik Jeong;Chilhee Chung;Hyunho Park;Byoungdeog Choi
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
24.Heteroepitaxial growth of high quality Germanium layer on Si(001) for GOI fabrication

机译：用于GOI制造的Si（001）上高质量锗层的异质外延生长
- 作者：J. T. Bian;Z. Y. Xue;D. Chen;Z. F. Di;M. Zhang
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
25.Wet-Chemical Silicon Wafer Thinning Process for High Chip Strength

机译：湿化学硅晶圆减薄工艺可提高切屑强度
- 作者：Kazuhiro Yoshikawa;Takumi Miyazaki;Naoya Watanabe;Masahiro Aoyagi
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
26.Scaled Micro-Relay Structure with Low Strain Gradient for Reduced Operating Voltage

机译：低应变梯度的可缩放微型继电器结构，可降低工作电压
- 作者：I-R. Chen;L. Hutin;C. Park;R. Lee;R. Nathanael;J. Yaung;J. Jeon;T.-J. King Liu
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
27.Applications of Nanowire Enabled Micro Opto-Thermal Actuation

机译：纳米线微光热致动的应用
- 作者：Yuerui Lu;Amit Lal
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
28.Integration Challenges of Ⅲ-Ⅴ Materials in advanced CMOS Logic

机译：Ⅲ-Ⅴ材料在先进CMOS逻辑中的集成挑战
- 作者：R. J. W. Hill;J. Huang;W.Y. Loh;T. Kim;M.H. Wong;D. Veksler;T.H. Cunningham;R. Droopad;J Oh;C. Hobbs;P. D. Kirsch;R. Jammy
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年
29.The effect of plasma treatment on reducing electroforming voltage of silicon oxide RRAM

机译：等离子体处理对降低氧化硅RRAM电铸电压的影响
- 作者：Fei Xue;Yen-Ting Chen;Yanzhen Wang;Fei Zhou;Yao-Feng Chang;B.Fowler;Jack Lee
- 会议名称：《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2.》 | 2012年