Method for forming damascene structure employing bi-layer carbon doped silicon nitride/carbon doped silicon oxide etch stop layer

摘要

Within a damascene method for forming a microelectronic fabrication, there is employed a first etch stop/liner layer formed upon a substrate, wherein the first etch stop/liner layer comprises a first layer formed upon the substrate and formed of a carbon doped silicon nitride material and a second layer formed upon the first layer and formed of a carbon doped silicon oxide material. The first etch stop/liner layer formed in accord with the above materials selections provides for attenuated oxidation of the substrate and attenuated residue formation of a photoresist layer coated, photo exposed and developed in contact with the first etch stop/liner layer.