Fabrication of semiconductor structures and devices forms by utilizing laser assisted deposition

摘要

Semiconductor structures are provided with high quality epitaxial layers of monocrystalline materials grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and an overlying monocrystalline material layer. With laser assisted fabrication, a laser energy source is used to preclean the accommodating buffer layer, to excite the accommodating buffer layer to higher energy to promote two-dimensional growth, and to amorphize the accommodating buffer layer, without requiring transport of the semiconductor structure from one environment to another. When chemical vapor deposition is utilized, the laser radiation source can be employed to crack volatile chemical precursors while selectively heating the growth substrate to enable selective deposition.