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LDMOS device with self-aligned RESURF region and method of fabrication

机译：具有自对准RESURF区域的LDMOS器件及其制造方法

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摘要

A RESURF LDMOS transistor (64) includes a RESURF region (42) that is self-aligned to a LOCOS field oxide region (44). The self-alignment produces a stable breakdown voltage BVdss by eliminating degradation associated with geometric misalignment and process tolerance variation.

机译：RESURF LDMOS晶体管（ 64 ）包括一个RESURF区域（ 42 ），该区域与LOCOS场氧化物区域（ 44 ）自对准。自对准通过消除与几何未对准和工艺公差变化相关的退化来产生稳定的击穿电压BVdss。 展开▼

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公开/公告号US6531355B2

专利类型

公开/公告日2003-03-11

原文格式PDF

申请/专利权人 TEXAS INSTRUMENTS INCORPORATED;
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申请/专利号US19990346761

发明设计人 DAN M. MOSHER;TAYLOR R. EFLAND;
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申请日1999-07-01

分类号H01L218/238;H01L213/36;

国家 US

入库时间 2022-08-22 00:07:06

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