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Epitaxial silicon growth and usage of epitaxial gate insulator for low power, high performance devices
Epitaxial silicon growth and usage of epitaxial gate insulator for low power, high performance devices
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机译:外延硅的生长以及外延栅绝缘体在低功率,高性能器件中的使用
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摘要
A method for reducing off-state leakage current of a MOSFET while promoting the formation of an epitaxial gate insulator layer between the substrate and gate stack includes implanting source/drain dopant into the substrate, and then forming a very thin epitaxial Silicon layer on the substrate by, e.g., molecular beam epitaxy. The high-k gate insulator layer is then deposited on the epitaxial layer, without an interfering native oxide or interfacial oxide being formed between the insulator layer and substrate, while establishing a very steep retrograde dopant profile and hence reducing off-state leakage current through the channel region.
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