Epitaxial Reactor Development for Growth of Silicon-on-Insulator Devices

摘要

A hydride vapor phase epitaxy system was designed and constructed for testing boron phosphide as the insulator for a silicon on insulator material study. Layer structures grown were tested for electrical properties and thickness. Silicon deposited on the boron phosphide was of good quality, but not as good as bulk silicon. There was some diffusion of boron and phosphorus into the silicon.