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Photomask, resist pattern formation method, method of determining alignment accuracy and method of fabricating semiconductor device
Photomask, resist pattern formation method, method of determining alignment accuracy and method of fabricating semiconductor device
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机译:光掩模,抗蚀剂图案形成方法,确定对准精度的方法和制造半导体器件的方法
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摘要
A photomask of this invention includes a main pattern part for forming a main pattern in a resist film and an alignment mark part for forming, in the resist film, an alignment accuracy determining mark not penetrating the resist film in section after development of the resist film.
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