SILICON SINGLE CRYSTAL WAFER HAVING VOID DEFECT FREE LAYER AS SURFACE LAYER AND HAVING DIAMETER OF 300 MM OR MORE AND METHOD FOR PRODUCING THE SAME

摘要

Title: SILICON SINGLE CRYSTAL WAFER HAVING VOID DENUDED ZONE ON THE SUFRACE AND DIAMETER OF AVOBE 300 mm AND ITS PRODUCTION METHODAbstract: A silicon single crystal wafer having a diameter of above 300 mm is characterized in that a denuded zone free of COP over a depth of 3 [err]m or more from the surface is present. A silicon single crystal production method is also disclosed in which a silicon single crystal is grown by pulling a silicon single crystal having a diameter of 300 mm or more at a speed V [mm/min] by the CZ method while doping it with nitrogen in such a way that the ratio V/G [mm[err]/K [err] min] is below 0.17 where G [K/mm] is the average of the temperature gradient between the melting point of silicon and 1400 [err] C in the crystal along the axis of the pulling.Thus, the silicon single crystal pulling condition and the wafer heat-treatment condition of producing a silicon single crystal wafer having a denuded zone free of COP at a sufficient depth in the surface by pulling a silicon single crystal of a diameter of 300 mm or more, machining the crystal into a wafer, and heat-treating the wafer are established.WO 02/103091 Al IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (57) R`J:-M ON It 0141300mm~4 ~C~ rSA r7Mba63um~t± fn----) ZC0PODt.~ 0 IXMMffir t ((L 300mm~I k o~ / J = '/ * as Ff ,r, 6%-- ~ I ± ff A 1 V [mm/min] L L:/1 =;/ A-X7)1, 61400°C0)rpl CD 5I±ff0t 0)M,Nok1& f COD -Ty,.-G[K/mm]Ztc LjjUV/G[mm2/K • min]CD t-0. 1794 T L L, L -CMA if h t;5 9 *MWfroCD a)"M_ zb;5 ° `x.6`1 h, lag 3 0 0 m m N o ~I ± 4 z T7 I L , ' l L ,