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Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300mm and its production method
Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300mm and its production method
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机译:表面直径大于300mm的具有空的裸露区的硅单晶晶片及其生产方法
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摘要
The present invention provides a silicon single crystal wafer having a diameter of 300 mm or more and having a defect-free layer containing no COP for a depth of 3 &mgr;m or more from a surface and a method for producing a silicon single crystal, wherein, when a silicon single crystal having a diameter of 300 mm or more is pulled with nitrogen doping by the CZ method, the crystal is grown with a value of V/G [mm2/K•min] of 0.17 or less, where V [mm/min] is a pulling rate, and G [K/mm] is an average of temperature gradient in the crystal along a pulling axis from the melting point of silicon to 1400° C. Thus, there are established conditions for pulling a silicon single crystal and conditions for heat treatment of wafer for obtaining a silicon single crystal wafer having a defect-free layer free from COP for a sufficient depth of the surface layer by pulling a silicon single crystal having a diameter of 300 mm or more, processing the crystal into wafers and subjecting the wafers to the heat treatment.
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机译:本发明提供一种直径为300mm以上且具有从表面到深度为3μm以上的无COP的无缺陷层的硅单晶晶片及其制造方法,其中,当通过CZ法用氮掺杂将直径为300mm以上的硅单晶拉出时,以V / G[ mm 2 Sup> / K&bull的值生长晶体。 min] 0.17以下,其中V[ mm / min]是拉动速率,G[ K / mm]是晶体中温度梯度沿着从硅熔点到1400度的拉动轴的平均值;因此,建立了用于拉动单晶硅的条件和用于晶片热处理的条件,以通过拉动单晶硅获得具有无COP的无缺陷层的硅单晶晶片,该无缺陷层对于表面层具有足够的深度。直径为300mm或更大的晶体,将晶体加工成晶片并对其进行热处理。
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