Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements

摘要

We have studied the applicability of the conventional electron beam induced current (EBIC) method to characterize the denuded zone (DZ) in internally gettered wafers. DZ widths were measured by EBIC and the results were found to be in agreement with other methods, such as scanning infrared microscopy (SIRM). In the EBIC-measurements, the minimum detectable DZ width is determined by the beam voltage. Gettering was observed by comparing intentionally contaminated and non-contaminated samples at low beam voltage.