Electron-beam-induced current measurements in silicon-on-insulator films prepared by zone-melting recrystallization

摘要

Enhanced diffusion of arsenic along grain boundaries and subboundaries in zone-recrystallized silicon-on-insulator films has been measured by electron-beam-induced current analysis of lateral pn junctions fabricated in the films. A four-hour diffusion at 1100 °C resulted in protrusions of arsenic at the junction edges which measured approximately 3–5 µm along the grain boundaries and only 1–2 µm along the subboundaries. The results suggest that under more ordinary thermal processing conditions, field-effect transistors with channel lengths greater than about 1.5 µm can be randomly positioned with respect to the more numerous subboundaries, but grain boundaries should be avoided.