首页>
外国专利>
Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300 mm and its production method
Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300 mm and its production method
展开▼
机译:在表面具有直径300mm以上的空的裸露区的硅单晶晶片及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides a silicon single crystal wafer having a diameter of 300 mm or more and having a defect-free layer containing no COP for a depth of 3 μm or more from a surface and a method for producing a silicon single crystal, wherein, when a silicon single crystal having a diameter of 300 mm or more is pulled with nitrogen doping by the CZ method, the crystal is grown with a value of V/G [mm2/K·min] of 0.17 or less, where V [mm/min] is a pulling rate, and G [K/mm] is an average of temperature gradient in the crystal along a pulling axis from the melting point of silicon to 1400° C. Thus, there are established conditions for pulling a silicon single crystal and conditions for heat treatment of wafer for obtaining a silicon single crystal wafer having a defect-free layer free from COP for a sufficient depth of the surface layer by pulling a silicon single crystal having a diameter of 300 mm or more, processing the crystal into wafers and subjecting the wafers to the heat treatment.
展开▼
机译:本发明提供一种直径为300mm以上且具有从表面到3μm以上的深度的,不含COP的无缺陷层的硅单晶晶片及其制造方法,其中,当通过CZ法用氮掺杂将直径为300mm以上的硅单晶拉出时,以V / G [mm 2 Sup> / K·min]的值生长晶体。 V [mm / min]为提拉速度,G [K / mm]为0.17以下,晶体中的温度梯度是沿着从硅的熔点到1400℃的拉力轴的平均温度梯度。建立拉制单晶硅的条件和晶片热处理的条件,以通过拉制直径为1μm的单晶硅来获得具有无COP的无缺陷层的硅单晶晶片以得到足够的表层深度的表面层。 300毫米或更大,将晶体加工成晶圆并进行晶圆处理进行热处理。
展开▼