non-volatile semiconductor memory devices having sector structure formed with common bulk

摘要

PURPOSE: A non-volatile semiconductor memory device having a sector structure formed with a shared bulk is provided to minimize or reduce a layout area by sharing a bulk region. CONSTITUTION: A cell array block(101) is formed with a plurality of cell transistors. A column decoder block(103) is connected with the cell array block(101) in order to perform a column decoding process. A plurality of word lines(WL0 to WLn-1) and a plurality of bit lines(BL0 to BLm-1) are formed in the cell array block(101). Gates of cells of n number are commonly connected with one word line. Drains of cells of m number are commonly connected with one bit line. The bit lines(BL0 to BLm-1) of m number are connected with a common data line through a corresponding column decoder. The common data lines of I number are connected with write drivers(200,210) and sense amplifiers(300,310). Bulk terminals of memory cell transistors and bulk terminals of transistors(T1,T2,T3) for forming the column decoder block(103) are commonly connected with a bulk driver(400). All source terminals of the memory cell transistors are connected with the same source line(SL) and driven by a source line driver(500).