Photosensor used as photoresistor, photodiode or phototransistor has semiconductor element with transparent semiconductor layers arranged parallel to each other

摘要

A photosensor comprises a transparent support (7); a semiconductor element (9) assigned to the support; and transparent contacts. The semiconductor element has three essentially transparent semiconductor layers arranged parallel to each other. Each of the contacts is arranged on both sides of the semiconductor element. The semiconductor layers form a diode arrangement, in which a photo-stream flows vertically to the support. Preferred Features: The second semiconductor layer is photo-electrically active and is delimited by the other two photo-electrically inactive semiconductor layers. The semiconductor layers are made from an amorphous material, nanocrystalline material, polycrystalline material or crystalline material. At least one of the layers is made from silicon, germanium, carbon, oxygen, nitrogen or an alloy of these materials. The support is made from glass, quartz or carbon foil.